p-type conductivity in cubic (Ga,Mn)N thin films -: art. no. 152114

被引：30

作者：

Edmonds, KW ^{[1
]}

Novikov, SV

Sawicki, M

Campion, RP

Staddon, CR

Giddings, AD

Zhao, LX

Wang, KY

Dietl, T

Foxon, CT

Gallagher, BL

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Japan Sci & Technol Agcy, ERATO, Semicond Spintron Project, PL-02668 Warsaw, Poland

[4] Univ Warsaw, Inst Theoret Phys, PL-00681 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 15期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1900924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of p-type cubic (Ga,Mn)N films are reported. Hole concentrations above 10(18) cm(-3) at room temperature are observed. Activated behavior is observed down to 150 K, with an acceptor ionization energy of around 45-60 meV. The dependence of hole concentration and ionization energy on Mn concentration indicates that the shallow acceptor level is not simply due to unintentional codoping. Thermopower measurements on freestanding films, capacitance-voltage profilometry, and the dependence of conductivity on thickness and growth temperature, all show that this is not due to diffusion into the substrate. We therefore associate the p-type conductivity with the presence of the Mn in the cubic GaN films. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 18 条

[1]

As DJ, 2001, PHYS STATUS SOLIDI A, V188, P699, DOI 10.1002/1521-396X(200112)188:2<699::AID-PSSA699>3.0.CO

[2]

2-8

[3] SELECTIVE GROWTH OF ZINCBLENDE, WURTZITE, OR A MIXED-PHASE OF GALLIUM NITRIDE BY MOLECULAR-BEAM EPITAXY [J].

CHENG, TS ;

JENKINS, LC ;

HOOPER, SE ;

FOXON, CT ;

ORTON, JW ;

LACKLISON, DE .

APPLIED PHYSICS LETTERS, 1995, 66 (12) :1509-1511

[4] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[5] Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F .

PHYSICAL REVIEW B, 2001, 63 (19)

[6]

Gotz W, 1996, APPL PHYS LETT, V68, P667, DOI 10.1063/1.116503

[7] The Mn3+/2+ acceptor level in group III nitrides [J].

Graf, T ;

Gjukic, M ;

Brandt, MS ;

Stutzmann, M ;

Ambacher, O .

APPLIED PHYSICS LETTERS, 2002, 81 (27) :5159-5161

[8] Optical properties of the deep Mn acceptor in GaN:Mn [J].

Korotkov, RY ;

Gregie, JM ;

Wessels, BW .

APPLIED PHYSICS LETTERS, 2002, 80 (10) :1731-1733

[9] Heavy doping effects in Mg-doped GaN [J].

Kozodoy, P ;

Xing, HL ;

DenBaars, SP ;

Mishra, UK ;

Saxler, A ;

Perrin, R ;

Elhamri, S ;

Mitchel, WC .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) :1832-1835

[10] Strong influence of Ga/N flux ratio on Mn incorporation into Ga1-xMnxN epilayers grown by plasma-assisted molecular beam epitaxy [J].

Kuroda, S ;

Bellet-Amalric, E ;

Giraud, R ;

Marcet, S ;

Cibert, J ;

Mariette, H .

APPLIED PHYSICS LETTERS, 2003, 83 (22) :4580-4582

← 1 2 →