Characteristics of the interfaces and the properties of chromium oxide nanolayers on gallium arsenide

被引：2

作者：

Ezhovskii, Yu. K. ^{[1
]}

Egorov, A. L. ^{[1
]}

机构：

[1] Tech Univ, St Petersburg Technol Inst, St Petersburg 198013, Russia

来源：

PHYSICS OF THE SOLID STATE | 2007年 / 49卷 / 09期

关键词：

73.40.Qv; 73.63.-b;

D O I：

10.1134/S1063783407090065

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper reports on the experimental results of investigations into the electrical properties of chromium oxide ultrathin layers (nanostructures) synthesized on the GaAs(100) and GaAs(110) surfaces through the molecular layer-by-layer growth (atomic layer deposition). It is established that the synthesis conditions and the layer composition affect the characteristics of the semiconductor-dielectric interface.

引用

页码：1638 / 1642

页数：5

共 19 条

[1]

ALEKHIN AP, 1988, ELEKTRON TECHN SER, V3, P32

[2]

ALESKOVSKII VB, 1975, DOKL AKAD NAUK SSSR, V6, P52

[3]

Azzam R.M.A., 1977, Ellipsometry and Polarized Light

[4]

EGOROV AL, 1984, ZH PRIKL KHIM, V57, P2126

[5]

[Ежовский Ю.К. Ezhovskii Yu. K.], 2006, [Неорганические материалы, Neorganicheskie materialy], V42, P421

[6]

Gelatos J, 2003, SOLID STATE TECHNOL, V46, P44

[7]

GROMOV VK, 1986, INTRO ELLIPSOMETRY L

[8] POOLE-FRENKEL CONDUCTION IN AMORPHOUS SOLIDS [J].

HILL, RM .

PHILOSOPHICAL MAGAZINE, 1971, 23 (181) :59-&

[9] ON CALCULATION OF THIN FILM REFRACTIVE INDEX AND THICKNESS BY ELLIPSOMETRY [J].

HOLMES, DA .

APPLIED OPTICS, 1967, 6 (01) :168-&

[10] NEW PHENOMENA IN SCHOTTKY-BARRIER FORMATION ON III-V-COMPOUNDS [J].

LINDAU, I ;

CHYE, PW ;

GARNER, CM ;

PIANETTA, P ;

SU, CY ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1332-1339

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