Influence of polar distribution on piezoelectric response of aluminum nitride thin films

被引：21

作者：

Kamohara, Toshihiro ^{[1
]}

Akiyama, Morito ^{[1
]}

Kuwano, Noriyuki ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Measurement Solut Res Ctr, Saga 8410052, Japan

[2] Kyushu Univ, Art Sci & Technol Ctr Cooperat Res, Fukuoka 8168580, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.2892041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have investigated the influence of the crystal orientation and the polar distribution on the piezoelectric response of aluminum nitride (AlN) thin films prepared on Si, Mo/Si, and Mo/AlN-interlayer (IL)/Si substrates with increasing sputtering power. The crystal orientation of films prepared on Si improves with increasing sputtering power. On the other hand, the crystal orientation of films prepared on Mo/Si and Mo/AlN-IL/Si hardly changes. However, the piezoelectric response of all the films drastically changes from negative to positive values and the predominant polarity changes from N polarity to Al polarity. We found the proportional relationship between the polar distribution and piezoelectric response. (c) 2008 American Institute of Physics.

引用

页数：3

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