Influence of metal electrodes on crystal orientation of aluminum nitride thin films

被引:70
作者
Akiyama, M
Nagao, K
Ueno, N
Tateyama, H
Yamada, T
机构
[1] Natl Inst Adv Ind Sci & Technol, Inst Struct & Engn Mat, Tosu, Saga 8410052, Japan
[2] Ube Ind Ltd, Ube Res Lab, Corp Res & Dev, Ube, Yamaguchi 7558633, Japan
关键词
aluminum nitride; thin films; FBAR; orientation; crystallinity; metal electrode; sputtering;
D O I
10.1016/j.vacuum.2004.01.052
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
We have investigated the influence of various bottom metal electrodes on the crystallinity and crystal orientation of aluminum nitride (AIN) thin films prepared on them in order to develop thin film bulk acoustic wave resonators. AIN films were prepared on 15 kinds of bottom metal electrode (Ag, Al, Au/Ti, Co, Cr, Cu, Fe, Mo, Nb, Ni, Pt/Ti, Ti, W, Zn, Zr) using rf magnetron reactive sputtering method. The crystallinity and crystal orientation of the AIN films strongly depend on the bottom metal electrodes. The AIN films prepared on the metal electrodes with the face centered cubic lattice structure show high c-axis orientation, except Ni. The AIN films prepared on Au/Ti and Pt/Ti show the highest crystallinity and orientation among them. The high crystallinity and orientation are due to the fact that the crystallinity of the Au/Ti and Pt/Ti electrodes is high, the surface roughness of the Au/Ti and Pt/Ti is low, and An and Pt (I 1 1) planes match well with hexagonal AIN crystal structure. These results suggest that the crystallinity and orientation of AIN films are strongly influenced by bottom metal electrodes. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:699 / 703
页数:5
相关论文
共 12 条
[1]
Statistical approach for optimizing sputtering conditions of highly oriented aluminum nitride thin films [J].
Akiyama, M ;
Xu, CN ;
Nonaka, K ;
Shobu, K ;
Watanabe, T .
THIN SOLID FILMS, 1998, 315 (1-2) :62-65
[2]
Flexible pulse-wave sensors from oriented aluminum nitride nanocolumns [J].
Akiyama, M ;
Ueno, N ;
Nonaka, K ;
Tateyama, H .
APPLIED PHYSICS LETTERS, 2003, 82 (12) :1977-1979
[3]
Akiyama M, 2001, J AM CERAM SOC, V84, P1917, DOI 10.1111/j.1151-2916.2001.tb00937.x
[4]
Ultrahigh resistivity aluminum nitride grown on mercury cadmium telluride [J].
Butcher, KSA ;
Tansley, TL .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) :6217-6221
[5]
Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications [J].
Dubois, MA ;
Muralt, P .
APPLIED PHYSICS LETTERS, 1999, 74 (20) :3032-3034
[6]
Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality [J].
Naik, RS ;
Lutsky, JJ ;
Reif, R ;
Sodini, CG ;
Becker, A ;
Fetter, L ;
Huggins, H ;
Miller, R ;
Pastalan, J ;
Rittenhouse, G ;
Wong, YH .
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2000, 47 (01) :292-296
[7]
Epitaxial growth of AlN on (La,Sr)(Al,Ta)O3 substrate by laser MBE [J].
Ohta, J ;
Fujioka, H ;
Sumiya, M ;
Koinuma, H ;
Oshima, M .
JOURNAL OF CRYSTAL GROWTH, 2001, 225 (01) :73-78
[8]
SHIOSAKI T, 1982, P 1982 ULTR S, P529
[9]
GAN, AIN, AND INN - A REVIEW [J].
STRITE, S ;
MORKOC, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1237-1266
[10]
THERMAL-EXPANSION OF ALN, SAPPHIRE, AND SILICON [J].
YIM, WM ;
PAFF, RJ .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1456-1457