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THERMAL-EXPANSION OF ALN, SAPPHIRE, AND SILICON
被引:543
作者
:
YIM, WM
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
YIM, WM
[
1
]
PAFF, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
PAFF, RJ
[
1
]
机构
:
[1]
RCA LABS,PRINCETON,NJ 08540
来源
:
JOURNAL OF APPLIED PHYSICS
|
1974年
/ 45卷
/ 03期
关键词
:
D O I
:
10.1063/1.1663432
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1456 / 1457
页数:2
相关论文
共 14 条
[1]
CAMPBELL WJ, 1961, 5757 US BUR MIN REP
[2]
LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS
[J].
DISMUKES, JP
论文数:
0
引用数:
0
h-index:
0
DISMUKES, JP
;
PAFF, RJ
论文数:
0
引用数:
0
h-index:
0
PAFF, RJ
;
EKSTROM, L
论文数:
0
引用数:
0
h-index:
0
EKSTROM, L
.
JOURNAL OF PHYSICAL CHEMISTRY,
1964,
68
(10)
:3021
-&
[3]
Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163
[4]
THERMAL EXPANSION OF ALAS
[J].
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
ETTENBERG, M
;
PAFF, RJ
论文数:
0
引用数:
0
h-index:
0
PAFF, RJ
.
JOURNAL OF APPLIED PHYSICS,
1970,
41
(10)
:3926
-+
[5]
THERMAL EXPANSION OF SILICON
[J].
HALL, RO
论文数:
0
引用数:
0
h-index:
0
HALL, RO
.
ACTA CRYSTALLOGRAPHICA,
1961,
14
(09)
:1004
-&
[6]
THERMAL-EXPANSION OF INXGA1-XP ALLOYS
[J].
KUDMAN, I
论文数:
0
引用数:
0
h-index:
0
KUDMAN, I
;
PAFF, RJ
论文数:
0
引用数:
0
h-index:
0
PAFF, RJ
.
JOURNAL OF APPLIED PHYSICS,
1972,
43
(09)
:3760
-&
[7]
ALUMINUM NITRIDE, A REFRACTORY FOR ALUMINUM TO 2000-DEGREE-C
[J].
LONG, G
论文数:
0
引用数:
0
h-index:
0
LONG, G
;
FOSTER, LM
论文数:
0
引用数:
0
h-index:
0
FOSTER, LM
.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY,
1959,
42
(02)
:53
-59
[8]
USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM
[J].
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
MANASEVIT, HM
;
ERDMANN, FM
论文数:
0
引用数:
0
h-index:
0
ERDMANN, FM
;
SIMPSON, WI
论文数:
0
引用数:
0
h-index:
0
SIMPSON, WI
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(11)
:1864
-+
[9]
ACOUSTIC SURFACE-WAVE PROPERTIES OF EPITAXIALLY GROWN ALUMINUM NITRIDE AND GALLIUM NITRIDE ON SAPPHIRE
[J].
OCLOCK, GD
论文数:
0
引用数:
0
h-index:
0
机构:
RCA,ADV TECHNOL LABS,VAN NUYS,CA 91409
OCLOCK, GD
;
DUFFY, MT
论文数:
0
引用数:
0
h-index:
0
机构:
RCA,ADV TECHNOL LABS,VAN NUYS,CA 91409
DUFFY, MT
.
APPLIED PHYSICS LETTERS,
1973,
23
(02)
:55
-56
[10]
LATTICE PARAMETERS, COEFFICIENTS OF THERMAL EXPANSION, AND ATOMIC WEIGHTS OF PUREST SILICON AND GERMANIUM
[J].
STRAUMANIS, ME
论文数:
0
引用数:
0
h-index:
0
STRAUMANIS, ME
;
AKA, EZ
论文数:
0
引用数:
0
h-index:
0
AKA, EZ
.
JOURNAL OF APPLIED PHYSICS,
1952,
23
(03)
:330
-334
←
1
2
→
共 14 条
[1]
CAMPBELL WJ, 1961, 5757 US BUR MIN REP
[2]
LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS
[J].
DISMUKES, JP
论文数:
0
引用数:
0
h-index:
0
DISMUKES, JP
;
PAFF, RJ
论文数:
0
引用数:
0
h-index:
0
PAFF, RJ
;
EKSTROM, L
论文数:
0
引用数:
0
h-index:
0
EKSTROM, L
.
JOURNAL OF PHYSICAL CHEMISTRY,
1964,
68
(10)
:3021
-&
[3]
Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163
[4]
THERMAL EXPANSION OF ALAS
[J].
ETTENBERG, M
论文数:
0
引用数:
0
h-index:
0
ETTENBERG, M
;
PAFF, RJ
论文数:
0
引用数:
0
h-index:
0
PAFF, RJ
.
JOURNAL OF APPLIED PHYSICS,
1970,
41
(10)
:3926
-+
[5]
THERMAL EXPANSION OF SILICON
[J].
HALL, RO
论文数:
0
引用数:
0
h-index:
0
HALL, RO
.
ACTA CRYSTALLOGRAPHICA,
1961,
14
(09)
:1004
-&
[6]
THERMAL-EXPANSION OF INXGA1-XP ALLOYS
[J].
KUDMAN, I
论文数:
0
引用数:
0
h-index:
0
KUDMAN, I
;
PAFF, RJ
论文数:
0
引用数:
0
h-index:
0
PAFF, RJ
.
JOURNAL OF APPLIED PHYSICS,
1972,
43
(09)
:3760
-&
[7]
ALUMINUM NITRIDE, A REFRACTORY FOR ALUMINUM TO 2000-DEGREE-C
[J].
LONG, G
论文数:
0
引用数:
0
h-index:
0
LONG, G
;
FOSTER, LM
论文数:
0
引用数:
0
h-index:
0
FOSTER, LM
.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY,
1959,
42
(02)
:53
-59
[8]
USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM
[J].
MANASEVIT, HM
论文数:
0
引用数:
0
h-index:
0
MANASEVIT, HM
;
ERDMANN, FM
论文数:
0
引用数:
0
h-index:
0
ERDMANN, FM
;
SIMPSON, WI
论文数:
0
引用数:
0
h-index:
0
SIMPSON, WI
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(11)
:1864
-+
[9]
ACOUSTIC SURFACE-WAVE PROPERTIES OF EPITAXIALLY GROWN ALUMINUM NITRIDE AND GALLIUM NITRIDE ON SAPPHIRE
[J].
OCLOCK, GD
论文数:
0
引用数:
0
h-index:
0
机构:
RCA,ADV TECHNOL LABS,VAN NUYS,CA 91409
OCLOCK, GD
;
DUFFY, MT
论文数:
0
引用数:
0
h-index:
0
机构:
RCA,ADV TECHNOL LABS,VAN NUYS,CA 91409
DUFFY, MT
.
APPLIED PHYSICS LETTERS,
1973,
23
(02)
:55
-56
[10]
LATTICE PARAMETERS, COEFFICIENTS OF THERMAL EXPANSION, AND ATOMIC WEIGHTS OF PUREST SILICON AND GERMANIUM
[J].
STRAUMANIS, ME
论文数:
0
引用数:
0
h-index:
0
STRAUMANIS, ME
;
AKA, EZ
论文数:
0
引用数:
0
h-index:
0
AKA, EZ
.
JOURNAL OF APPLIED PHYSICS,
1952,
23
(03)
:330
-334
←
1
2
→