Characterization of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's

被引：17

作者：

Anteney, IM ^{[1
]}

Lippert, G ^{[1
]}

Ashburn, P ^{[1
]}

Osten, HJ ^{[1
]}

Heinemann, B ^{[1
]}

Parker, GJ ^{[1
]}

Knoll, D ^{[1
]}

机构：

[1] Univ Southampton, Dept Elect & Comp Sci, Southampton SO17 1BJ, Hants, England

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 03期

关键词：

D O I：

10.1109/55.748906

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electrical method is applied to SiGe and SiGe:C heterojunction bipolar transistors (HBT's) to extract the bandgap narrowing in the base layer and to characterize the presence of parasitic energy barriers in the conduction band, arising from boron transient enhanced out-diffusion from the SiGe layer. It is shown that a background carbon concentration within the base (approximate to 10(20) cm(-3)) eliminates parasitic energy barriers at the collector/base junction, and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed.

引用

页码：116 / 118

页数：3

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