Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma.: 11.: Effects of source power and bias voltage in a CF4 plasma

被引:7
作者
Min, JH
Hwang, SW
Lee, GR
Moon, SH
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 04期
关键词
D O I
10.1116/1.1574053
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Variations in the properties of sidewalls due to the redeposition of etch products emitted from the bottom during SiO2 etching in a CF4 plasma were studied under different conditions of source power and bias voltage, in the range of 100 and 500 V, and 0 and 400 W, respectively. A Faraday cage and a step-shaped SiO2 pattern located in a transformer coupled plasma etcher permitted the control of the incident angle of ions, thus permitting the redeposition phenomenon to be observed on a macroscopic scale. Under all process conditions, the deposition rate on sidewall (A), affected by the redeposition of particles emitted from the bottom, was larger than that on sidewall (B), which was unaffected by the redeposition, because particle redeposition induced the formation of a sidewall passivation layer on sidewall (A). It was indirectly confirmed that the amount and the kinetic energy of particles sputtered from the bottom were closely related to the formation of the sidewall passivation layer. The redop-effect, which indicates the extent to which the redeposition contributes to the deposition rate on the sidewall, increased with bias voltage and source power. The extent of etching of the SiO2 underlayer of sidewall (B) increased with both the source power and bias voltage, in contrast to the case of sidewall (A). On sidewall (A), the extent Of SiO2 etching increased continuously with source power, but only increased with bias voltage when the latter was under 300 V. The etching decreased at higher bias voltages. (C) 2003 American Vacuum Society.
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页码:1203 / 1209
页数:7
相关论文
共 21 条
[1]   Atomistic simulation of silicon bombardment by energetic CF3+:: product distributions and energies [J].
Abrams, CF ;
Graves, DB .
THIN SOLID FILMS, 2000, 374 (02) :150-156
[2]   FILM REDEPOSITION ON VERTICAL SURFACES DURING REACTIVE ION ETCHING [J].
ALLRED, D ;
JACKEL, S ;
MAZURE, C ;
BARTH, HJ ;
CERVA, H ;
HOSLER, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (03) :505-511
[3]   More vertical etch profile using a Faraday cage in plasma etching [J].
Cho, BO ;
Hwang, SW ;
Ryu, JH ;
Moon, SH .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1999, 70 (05) :2458-2461
[4]   Expression of the Si etch rate in a CF4 plasma with four internal process variables [J].
Cho, BO ;
Hwang, SW ;
Kim, IW ;
Moon, SH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (01) :350-358
[5]   Angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma [J].
Cho, BO ;
Hwang, SW ;
Lee, GR ;
Moon, SH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (03) :730-735
[6]   Direct pattern etching for micromachining applications without the use of a resist mask [J].
Cho, BO ;
Ryu, JH ;
Hwang, SW ;
Lee, GR ;
Moon, SH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06) :2769-2773
[7]   Fabrication method for surface gratings using a Faraday cage in a conventional plasma etching apparatus [J].
Cho, BO ;
Hwang, SW ;
Ryu, JH ;
Kim, IW ;
Moon, SH .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (03) :129-130
[8]   REDEPOSITION KINETICS IN FLUOROCARBON PLASMA-ETCHING [J].
GRAY, DC ;
MOHINDRA, V ;
SAWIN, HH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (02) :354-364
[9]   A unified global self-consistent model of a capacitively and inductively coupled plasma etching system [J].
Hahn, YB ;
Pearton, SJ .
KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2000, 17 (03) :304-309
[10]   ANGULAR ETCHING CORRELATIONS FROM RIE - APPLICATION TO VLSI FABRICATION AND PROCESS MODELING [J].
HAMBLEN, DP ;
CHALIN, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (07) :1816-1822