FILM REDEPOSITION ON VERTICAL SURFACES DURING REACTIVE ION ETCHING

被引：11

作者：

ALLRED, D ^{[1
]}

JACKEL, S ^{[1
]}

MAZURE, C ^{[1
]}

BARTH, HJ ^{[1
]}

CERVA, H ^{[1
]}

HOSLER, W ^{[1
]}

机构：

[1] SIEMENS AG,TECHNOL CTR MICROELECTR,D-8000 MUNICH 83,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.584776

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：505 / 511

页数：7

共 11 条

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[6] CHEMICAL-PROPERTIES OF POLYMER-FILMS FORMED DURING THE ETCHING OF ALUMINUM IN CCL4 PLASMAS [J].

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[7] UNDERCUTTING PHENOMENA IN AL PLASMA-ETCHING [J].

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[8]

SCHWARZL S, 1983, MAY ISC M SAN FRANC

[9] PLASMA BEAM STUDIES OF SI AND AL ETCHING MECHANISMS [J].

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[10]

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