Characterization of low-k benzocyclobutene dielectric thin film

被引:24
作者
Chan, KC [1 ]
Teo, M
Zhong, ZW
机构
[1] MicroFab Technol Pte Ltd, Singapore, Singapore
[2] Nanyang Technol Univ, Sch Mat Engn, Singapore, Singapore
[3] Nanyang Technol Univ, Sch Mech & Prod Engn, Singapore 2263, Singapore
关键词
shrinkage; curing; thin film;
D O I
10.1108/13565360310487909
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports the characterization of a photosensitive benzocyclobutene (BCB), a low dielectric constant spin-on polymer for use as interlayer dielectric in the microelectronics industry. Research work is divided into three main sections. First, BCB thin film characterization was done to investigate the effects of curing conditions on BCB film thickness, dielectric properties, optical properties and extent of cure. Thermal stability of BCB was then evaluated using thermogravimetric analysis (TGA) to detect weight loss during thermal curing and degradation. Finally, curing kinetics study was conducted using both differential scanning calorimetry (DSC) dynamic (American Society for Testing and Materials method) and isothermal approaches. The first study shows that determination of vitrification point during thermal curing of BCB is crucial to predict film properties. By curing to just before vitrification, lowest refractive index, hence dielectric constant, could be obtained.
引用
收藏
页码:11 / 22
页数:12
相关论文
共 14 条
[1]  
CHAN KC, 2001, P 1 INT C EL PACK, P324
[2]  
Chen Y., 1997, International Journal of Microcircuits and Electronic Packaging, V20, P540
[3]  
CHIU PG, 2001, HDB ADV ELECT PHOTON, V4, P201
[4]  
*DOW, 1995, 61800219C198 DOW CHE
[5]  
*DOW, 1998, SAL SPEC CYCL TM 402
[6]  
*DOW, 1999, MSDS CYCL TM 4024 40
[7]   BENZOCYCLOBUTENE INTERLAYER DIELECTRICS FOR THIN-FILM MULTICHIP MODULES [J].
JOHNSON, RW ;
PHILLIPS, TL ;
WEIDNER, WK ;
HAHN, SF ;
BURDEAUX, DC ;
TOWNSEND, PH .
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1990, 13 (02) :347-352
[8]   Benzocyclobutene (DVS-BCB) polymer as an interlayer dielectric (ILD) material [J].
Mills, ME ;
Townsend, P ;
Castillo, D ;
Martin, S ;
Achen, A .
MICROELECTRONIC ENGINEERING, 1997, 33 (1-4) :327-334
[9]  
Ozawa T., 1970, J THERM ANAL, V2, P301, DOI DOI 10.1007/BF01911411
[10]  
PETERS L, 1998, PURSUING PERFECT LOW