Anomalous peaks in reflectance spectra of some GaAs substrates

被引:4
作者
Engelbrecht, JAA
Hillie, KT
机构
[1] Univ Port Elizabeth, Dept Phys, ZA-6000 Port Elizabeth, South Africa
[2] Univ Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
关键词
infrared; reflectance; GaAs;
D O I
10.1016/j.physb.2003.09.083
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
GaAs substrates of various planar orientations were characterized optically by measuring reflectance spectra as near-normal incidence. Anomalous peaks were observed in some spectra in the wavenumber range of 250-550 cm(-1) Several hypotheses for the origin of these peaks were suggested and investigated. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:320 / 323
页数:4
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