Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface

被引：10

作者：

Cheng, ZY ^{[1
]}

Pitera, AJ ^{[1
]}

Lee, ML ^{[1
]}

Jung, JW ^{[1
]}

Hoyt, JL ^{[1
]}

Antoniadis, DA ^{[1
]}

Fitzgerald, EA ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 03期

关键词：

fully depleted (FD); graded SiGe buffer technique; interface trap density; mobility enhancement; MOSFET; SiGe-on-insulator (SGOI); SiGe/buried-oxide (BOX) interface; strained-Si; strained-Si-on-insulator (SSOI); threading dislocation; wafer bonding;

D O I：

10.1109/LED.2003.823057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fully depleted strained-Si n- and p-MOSFETs have been demonstrated on bonded-SiGe-on-insulator (SGOI) substrates. The fully depleted devices show significant electron and hole mobility enhancements of 60 and 35%, respectively, demonstrating that high material quality, thin SGOI substrates can be fabricated by a wafer bonding approach. The bottom SiGe/buried-oxide interface in the SGOI structure and its impact on fully depleted device performance are also investigated.

引用

页码：147 / 149

页数：3

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