Amplification of femtosecond pulses over by 18 dB in a quantum-dot semiconductor optical amplifier

被引:46
作者
Rafailov, EU [1 ]
Loza-Alvarez, P
Sibbett, W
Sokolovskii, GS
Livshits, DA
Zhukov, AE
Ustinov, VM
机构
[1] Univ St Andrews, Sch Phys & Astron, St Andrews KY16 9SS, Fife, Scotland
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
femtosecond pulses; quantum dots (QDs); semiconductor amplifier;
D O I
10.1109/LPT.2003.815362
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate amplification (>18 dB) of 200-fs pulses in a quantum-dot (QD) semiconductor amplifier. Our measurements have shown that such QD devices can provide amplification of femtosecond pulses over a spectral range that exceeds 100 nm.
引用
收藏
页码:1023 / 1025
页数:3
相关论文
共 6 条
[1]   Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices [J].
Berg, TW ;
Bischoff, S ;
Magnusdottir, I ;
Mork, J .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (06) :541-543
[2]   Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers [J].
Borri, P ;
Langbein, W ;
Hvam, JM ;
Heinrichsdorff, F ;
Mao, MH ;
Bimberg, D .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (03) :544-551
[3]   Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature [J].
Borri, P ;
Schneider, S ;
Langbein, W ;
Woggon, U ;
Zhukov, AE ;
Ustinov, VM ;
Ledentsov, NN ;
Alferov, ZI ;
Ouyang, D ;
Bimberg, D .
APPLIED PHYSICS LETTERS, 2001, 79 (16) :2633-2635
[4]   1.3 μm room-temperature GaAs-based quantum-dot laser [J].
Huffaker, DL ;
Park, G ;
Zou, Z ;
Shchekin, OB ;
Deppe, DG .
APPLIED PHYSICS LETTERS, 1998, 73 (18) :2564-2566
[5]   High-repetition-rate ultrashort-pulse optical parametric oscillator continuously tunable from 2.8 to 6.8 μm [J].
Loza-Alvarez, P ;
Brown, CTA ;
Reid, DT ;
Sibbett, W ;
Missey, M .
OPTICS LETTERS, 1999, 24 (21) :1523-1525
[6]  
RAFAILOV EU, P CLEO 2002