Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

被引：183

作者：

Berg, TW ^{[1
]}

Bischoff, S ^{[1
]}

Magnusdottir, I ^{[1
]}

Mork, J ^{[1
]}

机构：

[1] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 06期

关键词：

gain recovery; quantum-dot amplifiers; ultrafast;

D O I：

10.1109/68.924013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The on excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a on amplifier is found to be limited by the wetting-layer dynamics.

引用

页码：541 / 543

页数：3

共 11 条

[1] In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties
Bhattacharya, P
Kamath, KK
Singh, J
Klotzkin, D
Phillips, J
Jiang, HT
Chervela, N
Norris, TB
Sosnowski, T
Laskar, J
Murty, MR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (05) : 871 - 883
[2] High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers
Bhattacharya, P
Klotzkin, D
Qasaimeh, O
Zhou, WD
Krishna, S
Zhu, DH
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (03) : 426 - 438
[3] InGaAs-GaAs quantum-dot lasers
Bimberg, D
Kirstaedter, N
Ledentsov, NN
Alferov, ZI
Kopev, PS
Ustinov, VM
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 196 - 205
[4] Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers
Borri, P
Langbein, W
Hvam, JM
Heinrichsdorff, E
Mao, MH
Bimberg, D
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (06) : 594 - 596
[5] Quantum dimensionality, entropy, and the modulation response of quantum dot lasers
Deppe, DG
Huffaker, DL
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (21) : 3325 - 3327
[6] Grundmann M, 1997, PHYS STATUS SOLIDI B, V203, P121, DOI 10.1002/1521-3951(199709)203:1<121::AID-PSSB121>3.0.CO
[7] 2-M
[8] Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
Heinrichsdorff, F
Mao, MH
Kirstaedter, N
Krost, A
Bimberg, D
Kosogov, AO
Werner, P
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (01) : 22 - 24
[9] Rapid carrier relaxation in self-assembled InxGa1-xAs/GaAs quantum dots
Ohnesorge, B
Albrecht, M
Oshinowo, J
Forchel, A
Arakawa, Y
[J]. PHYSICAL REVIEW B, 1996, 54 (16): : 11532 - 11538
[10] InGaAs quantum dot lasers with submilliamp thresholds and ultra-low threshold current density below room temperature
Park, G
Shchekin, OB
Huffaker, DL
Deppe, DG
[J]. ELECTRONICS LETTERS, 2000, 36 (15) : 1283 - 1284

← 1 2 →