Dual work function metal gates using full nickel silicidation of doped poly-Si

被引：65

作者：

Sim, JH

Wen, HC

Lu, JP

Kwong, DL

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

[2] Texas Instruments Inc, Silicon Technol Dev, Dallas, TX 75243 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 10期

关键词：

dopant; full silicidation; interface state density; metal gate; work function;

D O I：

10.1109/LED.2003.817372

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates the work function adjustment on fully silicided (FUSI) NiSi metal gates for dual-gate CMOS, and how it is effected by the poly-Si dopants. By comparing FUSI on As-, B-, and undoped poly-Si using the same p-Si substrates, it is shown that both As and B influence the work function of NiSi FUSI gate significantly, with As showing more effects than B possibly due to more As pile-up at the NiSi-SiO2 interface. No degradations on the underlying gate dielectrics are observed in terms of interface state density (D-it), fixed oxide charges, leakage current, and breakdown voltage, suggesting that NiSi FUSI is compatible with dual-gate CMOS processing.

引用

页码：631 / 633

页数：3

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