Thin films of pure and acceptor (Al) as well as donor (Nb) doped PbTiO3 were prepared using a chemical solution deposition method. The nominal compositions of the solutions were equivalent to those of PbTiO3, Pb(Ti0.95Al0.05)O-3 and Pb(Ti0.95Nb0.05)O-3, respectively. In the case of PbTiO3, the remanent polarization amounted to 43 muC/cm(2), but the shape of the hysteresis curve was round. On the other hand, Al and Nb doped PbTiO3 thin films exhibited well-saturated P-Ehysteresis curves. The shape of these curves was slim compared to that of PbTiO3. The remanent polarization of the PbiTi(0.95)Al(0.05))O-3 and Pb(Ti0.95Al0.05)O-3 thin films amounted to 18 and 15 muC/cm(2). respectively, and the coercive field decreased in comparison with that of PbTiO3. The leakage currents of the PbTiO3, Pb(Ti0.95Al0.05)O-3 and Pb(Ti0.95Al0.05)O-3 thin films were 7.68x10(-3), 3.21x10(-6) and 6.58x10(-4) A/cm(2), respectively, at +10V.
