Electrical properties of dense Me-doped bismuth vanadate (Me = Cu, Co) pO2-dependent conductivity determined by impedance spectroscopy

被引:63
作者
Guillodo, M [1 ]
Fouletier, J
Dessemond, L
Del Gallo, P
机构
[1] Lab Electrochim & Physicochim Mat & Interfaces, F-38402 St Martin Dheres, France
[2] Ctr Rech Claude Delorme, LAIR LIQUIDE, F-78354 Jouy En Josas, France
关键词
Bi4V2O11; electrical conductivity; grain boundaries; impedance spectroscopy; ionic conductivity;
D O I
10.1016/S0955-2219(01)00214-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Co- and Cu-substituted Bi4V2O11 compounds were synthesised by means of fine reactive powders with a typical d(50) close to 0.5 mum. Appropriate sintering conditions resulted in fine and homogeneous microstructure without any cracks related to large grain size. The total electrical conductivity was measured by complex impedance spectroscopy with respect to temperature, oxygen partial pressure, thermal history, and nature of dopant. The bulk and the grain boundary conductivity were also studied for both compounds. No time-dependence and no thermal hysteresis of the total electrical conductivity were observed and a structure dependence of the electrical properties was noticed. BICUVOX0.10 material can be considered as a pure oxide ion conductor within the investigated experimental conditions whereas BICOVOX0.10 exhibited a p-type conductivity contribution to the bulk conductivity with an ionic transference number greater than 0.97. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:2331 / 2344
页数:14
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