Solution-processed organic n-type thin-film transistors

被引：174

作者：

Waldauf, C

Schilinsky, P

Perisutti, M

Hauch, J

Brabec, CJ

机构：

[1] Siemens AG, Innovat Polymer, D-91052 Erlangen, Germany

[2] Carl von Ossietzky Univ Oldenburg, Dept Energy & Semicond Res, D-26129 Oldenburg, Germany

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 24期

关键词：

D O I：

10.1002/adma.200305623

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An organic n-type transistor, where both insulating and active layer were processed from solution, has been produced. As the active layer the C-60-derivative, [6,6]-phenyl C-61-butyric acid methyl ester (PCBM), was used. Its electron mobility was determined to be as high as mu(e) = 4.5 x 10(-3) cm(2) V-1 s(-1) when calcium drain/source contacts were used. If these contacts are formed from more air-stable metals, the device performance decreases.

引用

页码：2084 / +

页数：6

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