New method to determine the a-Si:H pin diode series resistance by noise measurements

被引：3

作者：

Blecher, F ^{[1
]}

Seibel, K ^{[1
]}

Hillebrand, M ^{[1
]}

Böhm, M ^{[1
]}

机构：

[1] Univ Gesamthsch Siegen, Inst Halbleitertech, D-57068 Siegen, Germany

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998 | 1998年 / 507卷

关键词：

D O I：

10.1557/PROC-507-169

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The series resistance limits the linearity of photodiodes and decreases the efficiency of solar cells. It is usually determined from IV-measurements for moderate and high forward current density. This method, however, provides only partial information about Rs, since the series resistance depends on the operating point. An alternative method is based on noise measurements. System noise of the measuring system with a low-noise current-voltage converter has been investigated. A new method for extraction of photodiode series resistance from noise measurements is suggested. Noise measurements are carried out for a-Si:H pin diodes. The series resistance of an amorphous pin diode has been extracted for different operating conditions using the new measurement method.

引用

页码：169 / 174

页数：6

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