Atomic structure of MBE-Grown GaAs nanowhiskers

被引：72

作者：

Soshnikov, IP ^{[1
]}

Cirlin, GÉ

Tonkikh, AA

Samsonenko, YB

Dubovskii, VG

Ustinov, VM

Gorbenko, OM

Litvinov, D

Gerthsen, D

机构：

[1] Russian Acad Sci, St Petersburg Physicotech Sci & Educ Ctr, St Petersburg 195220, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Russian Acad Sci, Inst Analyt Instrument Mkt, St Petersburg 198103, Russia

[4] Univ Karlsruhe, D-76128 Karlsruhe, Germany

来源：

PHYSICS OF THE SOLID STATE | 2005年 / 47卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.2142881

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The structural properties of MBE-grown GaAs and Al0.3Ga0.7As nanowhiskers were studied. The formation of wurtzite and 4H-polytype hexagonal structures with characteristic sizes of 100 nm or larger in these materials was demonstrated. It is concluded that the Au-Ga activation alloy symmetry influences the formation of the hexagonal structure. (c) 2005 Pleiades Publishing, Inc.

引用

页码：2213 / 2218

页数：6

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