Raman spectra of indium nitride thin films grown by microwave-excited metalorganic vapor phase epitaxy on (0001) sapphire substrates

被引：62

作者：

Kwon, HJ ^{[1
]}

Lee, YH ^{[1
]}

Miki, O ^{[1
]}

Yamano, H ^{[1
]}

Yoshida, A ^{[1
]}

机构：

[1] TOYOHASHI UNIV TECHNOL,DEPT ELECT & ELECTR ENGN,TOYOHASHI,AICHI 441,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.116949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report Raman scattering study on InN single crystalline films with wurtzite form. The films were grown on sapphire substrates by microwave-excited metalorganic vapor phase epitaxy and optical phonon properties of the films were investigated. Both A(1)(LO) and E(2)((2)) peaks, which are related to a longitudinal optical phonon mode and a doubly degenerated mode, respectively, were observed at 596 cm(-1) with the full width of 36 cm(-1) at half maximum intensity and at 495 cm(-1) with the full width of 20 cm(-1) at half maximum intensity. (C) 1996 American Institute of Physics.

引用

页码：937 / 939

页数：3

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