Laser action of trions in a semiconductor quantum well

被引：16

作者：

Puls, J ^{[1
]}

Mikhailov, GV

Henneberger, F

Yakovlev, DR

Waag, A

Faschinger, W

机构：

[1] Humboldt Univ, Inst Phys, D-10115 Berlin, Germany

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Univ Dortmund, D-44221 Dortmund, Germany

[4] Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany

[5] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 28期

关键词：

D O I：

10.1103/PhysRevLett.89.287402

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the observation of optical gain and lasing at the trion transition of n-doped ZnSe quantum wells. Specifically, the (stimulated) emission-absorption net rate of this transition is controlled by the difference of trion and electron occupation in momentum space. As the mass of the trion is larger than that of the electron, gain occurs on the low-energy side of the line center without degeneracy and inversion in the total particle numbers. The scenario is reminiscent of a three-level system. At higher injection levels, carrier heating sets on and limits the available gain to values of about 10(4) cm(-1).

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页数：4

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