Infrared integrated optical evanescent field sensor for gas analysis Part II.: Fabrication

被引:22
作者
Siebert, R [1 ]
Müller, J [1 ]
机构
[1] Tech Univ Hamburg, Dept Micro Syst Technol, D-21073 Hamburg, Germany
关键词
gas sensor; evanescent field waveguide; integrated optical infrared waveguide; silicon waveguide;
D O I
10.1016/j.sna.2004.09.020
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A free-standing single crystal silicon integrated optical waveguide was developed for an integrated optical gas analysis sensor working in the middle infrared region. The cross section was designed to generate a pronounced fraction of evanescent optical power which interacts with the surrounding gas atmosphere field. The silicon waveguide has an optical window from about I to 6.3 mu m thus allowing the measurement of pollutants like CO, CO2, NO, N2O, NO2 emitted, e.g. in combustion processes as well as CH4 and H2O. The light at the waveguide output contains quantitative information about the gases present in a mixture. The high step in refractive index between silicon core and gas allows very small bending radii so that a sufficiently long waveguide can be realised on small chip area (about 1 m on 1 cm(2)). The waveguide is patterned as a spiral or a meander in the wafer plane. A suitable freestanding cross section profile is realized by a sequence of anisotropic dry etching, oxidation and isotropic dry etching of crystalline silicon bulk material. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:584 / 592
页数:9
相关论文
共 12 条
[1]  
[Anonymous], INFRARED SPECTRA QUA
[2]  
GRAY DC, 1993, J VAC SCI TECHNOL B, V11, P1234
[3]   MECHANISMS OF THE HF/H2O VAPOR-PHASE ETCHING OF SIO2 [J].
HELMS, CR ;
DEAL, BE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04) :806-811
[4]   THE BLACK SILICON METHOD - A UNIVERSAL METHOD FOR DETERMINING THE PARAMETER SETTING OF A FLUORINE-BASED REACTIVE ION ETCHER IN DEEP SILICON TRENCH ETCHING WITH PROFILE CONTROL [J].
JANSEN, H ;
DEBOER, M ;
LEGTENBERG, R ;
ELWENSPOEK, M .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1995, 5 (02) :115-120
[5]   THE BLACK SILICON METHOD .2. THE EFFECT OF MASK MATERIAL AND LOADING ON THE REACTIVE ION ETCHING OF DEEP SILICON TRENCHES [J].
JANSEN, H ;
DEBOER, M ;
BURGER, J ;
LEGTENBERG, R ;
ELWENSPOEK, M .
MICROELECTRONIC ENGINEERING, 1995, 27 (1-4) :475-480
[6]  
Liebermann MA., 1994, PRINCIPLES PLASMA DI
[7]  
MESSICA A, 1991, P SOC PHOTO-OPT INS, V1591, P192
[8]  
*OPT CORP, 1999, REF MAN BPM CAD WAV
[9]   Infrared integrated optical evanescent field sensor for gas analysis Part I:: System design [J].
Siebert, R ;
Müller, J .
SENSORS AND ACTUATORS A-PHYSICAL, 2005, 119 (01) :138-149
[10]  
SIEBERT R, 2004, THESIS TU HAMBURG HA