Blue luminescent centers and microstructural evaluation by XPS and Raman in ZnO thin films annealed in vacuum, N2 and O2

被引：434

作者：

Wei, X. Q. ^{[1
]}

Man, B. Y. ^{[1
]}

Liu, M. ^{[1
]}

Xue, C. S. ^{[1
]}

Zhuang, H. Z. ^{[1
]}

Yang, C. ^{[1
]}

机构：

[1] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 388卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

PLD; ZnO films; annealing effects; crystal structure; surface morphology; optical properties;

D O I：

10.1016/j.physb.2006.05.346

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Zinc oxide (ZnO) thin films prepared on sapphire substrates by employing a pulsed laser deposition (PLD) have been annealed in vacuum, N-2, and O-2 ambient at annealing temperature 600 degrees C. X-ray diffraction (XRD) and atomic force microscopy (AFM) observation show that the annealed thin films possess (0002) textured feature and form better crystal grains with a large size. X-ray photoelectron spectroscopy (XPS) and Raman analysis show the defects of ZnO thin films annealed in different ambient is distinctly different. The film annealed in vacuum possesses large oxygen vacancies (V-o) and Zri interstitials (Zn-i); while large surface defects exist in film annealed in N-2 ambient. The concentrations of the intrinsic and extrinsic defects are the lowest in ZnO thin film annealed in oxygen gas. Photo luminescence (PL) spectra also reveal that the ultraviolet (UV) emission is the best for thin film annealed in O-2. The blue emission (2.66eV) is ascribed to the electronic transition from the donor energy level of Zn interstitials to acceptor energy level of Zn vacancies rather than the O vacancy. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：145 / 152

页数：8

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