Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements

Defects in hydrothermal grown ZnO single crystals are studied as a function of annealing temperature using positron annihilation, x-ray diffraction, Rutherford backscattering, Hall, and cathodoluminescence measurements. Positron lifetime measurements reveal the existence of Zn vacancy related defects in the as-grown state. The positron lifetime decreases upon annealing above 600 degreesC, which implies the disappearance of Zn vacancy related defects, and then remains constant up to 900 degreesC. The Rutherford backscattering and x-ray rocking curve measurements show the improvement of crystal quality due to annealing above 600 degreesC. Although the crystal quality monitored by x-ray diffraction measurements is further improved after annealing at above 1000 degreesC, the positron lifetime starts to increase. This is due to either the formation of Zn vacancy related defects, or the change of the Zn vacancy charge state occupancy as a result of the Fermi level movement. The electron concentration increases continuously with increasing annealing temperature up to 1200 degreesC, indicating the formation of excess donors, such as oxygen vacancies or zinc interstitials. The cathodoluminescence measurements reveal that the ultraviolet emission is greatly enhanced in the same temperature range. The experimental results show that the ZnO crystal quality, electrical and optical characteristics are improved by postgrowth annealing from 600 to 1200 degreesC. The disappearance of Zn vacancy related defects contributes to the initial stage of improved crystal quality. (C) 2003 American Institute of Physics.