Photoluminescence studies in ZnO samples

被引：87

作者：

Boemare, C ^{[1
]}

Monteiro, T

Soares, MJ

Guilherme, JG

Alves, E

机构：

[1] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal

[2] Inst Tecnol & Nucl, Sacavem, Portugal

来源：

PHYSICA B-CONDENSED MATTER | 2001年 / 308卷

关键词：

PL; TRPL; RBS; ZnO;

D O I：

10.1016/S0921-4526(01)00854-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The similarities between ZnO and GaN samples reveal that the semiconductor oxide is a potential material as a promising material for optoelectronic devices. In this work, we study by spectroscopic and RBS techniques the characteristics of bulk ZnO. A comparison between the energy separation of the several groups of near band edge photoluminescence emission bands and the energy separation between the free exciton resonances observed in reflectivity is made. We report on the luminescence dependence from temperature and the variation of the relative intensities of the lines. From the data, an assignment of recombination centers is discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：985 / 988

页数：4

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