Optical orientation and control of spin memory in individual InGaAs quantum dots

被引:52
作者
Ebbens, A [1 ]
Krizhanovskii, DN
Tartakovskii, AI
Pulizzi, F
Wright, T
Savelyev, AV
Skolnick, MS
Hopkinson, M
机构
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1103/PhysRevB.72.073307
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A high degree of spin polarization (or spin memory) is achieved using quasiresonant optical excitation at zero magnetic field (B=0) for singly positively charged excitons (X+) in individual quantum dots embedded in a Schottky diode. The high degree of spin memory indicates highly efficient optical excitation ("writing") of long-lived spin-polarized electrons, determining the X+ spin orientation. We demonstrate control of the degree of spin polarization by the applied bias, controlling carrier tunneling rates in the device. In addition, efficient spin-selective optical excitation of neutral excitons is achieved for B > 1 T.
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页数:4
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