Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4As quantum dots -: art. no. 153316

被引:108
作者
Finley, JJ [1 ]
Mowbray, DJ
Skolnick, MS
Ashmore, AD
Baker, C
Monte, AFG
Hopkinson, M
机构
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
关键词
D O I
10.1103/PhysRevB.66.153316
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Photoluminescence spectra from single self-assembled InAs quantum dots embedded in an Al0.6Ga0.4As matrix are reported. The spectra consist of a higher-energy linearly polarized doublet, with large splitting of the order of 1 meV, and a lower-energy unpolarized line. The polarized lines are explained in terms of exciton recombination at asymmetric dots, with the splitting due to the anisotropic exchange interaction. The lower-energy unsplit, unpolarized line is ascribed to recombination at the same dots but in the presence of an excess charge, which results in zero net electron spin and hence quenching of the exchange interaction. The conclusions are fully supported by magneto-optical investigations.
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页码:1 / 4
页数:4
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