Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots -: art. no. 073307

被引：162

作者：

Finley, JJ ^{[1
]}

Ashmore, AD

Lemaître, A

Mowbray, DJ

Skolnick, MS

Itskevich, IE

Maksym, PA

Hopkinson, M

Krauss, TF

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Hull, Sch Engn, Kingston Upon Hull HU6 7RX, N Humberside, England

[3] Univ Leicester, Dept Phys & Astron, Leicester LE1 7RH, Leics, England

[4] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[5] Univ St Andrews, Dept Phys & Astron, St Andrews KY16 9SS, Fife, Scotland

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.63.073307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Charged (X*) and neutral (X) exciton recombination is reported in the photoluminescence spectra of single In(Ga)As quantum dots. Photoluminescence excitation (PLE) spectra show that the charged excitons are created only for excitation in the barrier or cladding layers of the structure, consistent with their charged character, whereas the neutral excitons in addition show well-defined excitation features for resonant excitation of the dots. The PLE spectra for X and X* exhibit a clear anticorrelation in the region of the wetting layer transition, showing that they compete for photocreated carriers.

引用

页数：4

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