Photoluminescence from Chemically Exfoliated MoS2

被引:3486
作者
Eda, Goki [1 ]
Yamaguchi, Hisato [2 ]
Voiry, Damien [2 ]
Fujita, Takeshi [3 ,4 ]
Chen, Mingwei [3 ]
Chhowalla, Manish [2 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England
[2] Rutgers State Univ, Piscataway, NJ 08854 USA
[3] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
[4] JST, PRESTO, Kawaguchi, Saitama 3320012, Japan
基金
新加坡国家研究基金会; 日本学术振兴会; 美国国家科学基金会;
关键词
MoS2; photoluminescence; exfoliation; phase transformation; dispersion; TRANSITION-METAL DICHALCOGENIDES; SINGLE-LAYER MOS2; OPTICAL-ABSORPTION; INTERCALATION; NANOSHEETS; MOBILITY; FILMS; WS2;
D O I
10.1021/nl201874w
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A two-dimensional crystal of molybdenum disulfide (MoS2) monolayer is a photoluminescent direct gap semiconductor in striking contrast to its bulk counterpart. Exfoliation of bulk MoS2 via Li intercalation is an attractive route to large-scale synthesis of monolayer crystals. However, this method results in loss of pristine semiconducting properties of MoS2 due to structural changes that occur during Li intercalation. Here, we report structural and electronic properties of chemically exfoliated MoS2. The metastable metallic phase that emerges from Li intercalation was found to dominate the properties of as-exfoliated material, but mild annealing leads to gradual restoration of the semiconducting phase. Above an annealing temperature of 300 degrees C, chemically exfoliated MoS2 exhibit prominent band gap photoluminescence, similar to mechanically exfoliated monolayers, indicating that their semiconducting properties are largely restored.
引用
收藏
页码:5111 / 5116
页数:6
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