Insulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors

被引：154

作者：

Cho, Sungjae ^{[1
]}

Butch, Nicholas P. ^{[1
]}

Paglione, Johnpierre ^{[1
]}

Fuhrer, Michael S. ^{[1
]}

机构：

[1] Univ Maryland, Ctr Nanophys & Adv Mat, College Pk, MD 20742 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 05期

关键词：

topological insulator; bismuth selenide; surface state; field-effect transistor; TOPOLOGICAL-INSULATOR; SURFACE-STATES; TRANSPORT;

D O I：

10.1021/nl200017f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ultrathin (approximately three quintuple layer) field-effect transistors (FETs) of topological insulator Bi2Se3 are prepared by mechanical exfoliation on 300 nm SiO2/Si susbtrates. Temperature- and gate-voltage-dependent conductance measurements show that ultrathin Bi2Se3 FETs are n-type and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.

引用

页码：1925 / 1927

页数：3

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