Strong surface scattering in ultrahigh-mobility Bi2Se3 topological insulator crystals

被引：380

作者：

Butch, N. P. ^{[1
]}

Kirshenbaum, K. ^{[1
]}

Syers, P. ^{[1
]}

Sushkov, A. B. ^{[1
]}

Jenkins, G. S. ^{[1
]}

Drew, H. D. ^{[1
]}

Paglione, J. ^{[1
]}

机构：

[1] Univ Maryland, Dept Phys, Ctr Nanophys & Adv Mat, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 24期

基金：

美国国家科学基金会;

关键词：

SINGLE DIRAC CONE; BI2TE3;

D O I：

10.1103/PhysRevB.81.241301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

While evidence of a topologically nontrivial surface state has been identified in surface-sensitive measurements of Bi2Se3, a significant experimental concern is that no signatures have been observed in bulk transport. In a search for such states, nominally undoped single crystals of Bi2Se3 with carrier densities approaching 10(16) cm(-3) and very high mobilities exceeding 2 m(2) V-1 s(-1) have been studied. A comprehensive analysis of Shubnikov-de Haas oscillations, Hall effect, and optical reflectivity indicates that the measured electrical transport can be attributed solely to bulk states, even at 50 mK at low Landau-level filling factor, and in the quantum limit. The absence of a significant surface contribution to bulk conduction demonstrates that even in very clean samples, the surface mobility is lower than that of the bulk, despite its topological protection.

引用

页数：4

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