Angular-dependent oscillations of the magnetoresistance in Bi2Se3 due to the three-dimensional bulk Fermi surface

被引：174

作者：

Eto, Kazuma ^{[1
]}

Ren, Zhi ^{[1
]}

Taskin, A. A. ^{[1
]}

Segawa, Kouji ^{[1
]}

Ando, Yoichi ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 19期

关键词：

SINGLE DIRAC CONE; TOPOLOGICAL-INSULATOR; TRANSPORT; METALS; STATES; BI2TE3;

D O I：

10.1103/PhysRevB.81.195309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We observed pronounced angular-dependent magnetoresistance (MR) oscillations in a high-quality Bi2Se3 single crystal with the carrier density of 5 x 10(18) cm(-3), which is a topological insulator with residual bulk carriers. We show that the observed angular-dependent oscillations can be well simulated by using the parameters obtained from the Shubnikov-de Haas oscillations, which clarifies that the oscillations are essentially due to the bulk Fermi surface. By completely elucidating the bulk oscillations, this result paves the way for distinguishing the two-dimensional surface state in angular-dependent MR studies in Bi2Se3 with much lower carrier density. Besides, the present result provides a compelling demonstration of how the Landau quantization of a closed three-dimensional Fermi surface can give rise to pronounced angular-dependent MR oscillations.

引用

页数：5

共 42 条

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