Study of charge transport in non-irradiated and irradiated silicon detectors

被引：29

作者：

Leroy, C

Roy, P

Casse, C

Glaser, M

Grigoriev, E

Lemeilleur, F

机构：

[1] Univ Montreal, Phys Nucl Lab, Montreal, PQ H3C 3J7, Canada

[2] CERN, Geneva, Switzerland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 426卷 / 01期

关键词：

D O I：

10.1016/S0168-9002(98)01478-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The electrical characteristics of non-irradiated and irradiated n-type silicon detectors (p(+)-n-n(+) diode) are extracted by fitting a charge transport model to a set of experimental data obtained from the measurement of the current pulse response induced by alpha and beta particles in non-irradiated and irradiated silicon detectors. The detectors have been irradiated either with approximate to 1 MeV neutrons up to a fluence of 11.2 x 10(13) n/cm(2) or with 24 GeV/c protons up to a fluence of 10.6 x 10(13) p/cm(2). After n to p-type inversion, a small junction on the p(+) side of the detector is introduced to fit the experimental data and therefore to account for the evolution of the electrical characteristics of the detectors with fluence, (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：99 / 108

页数：10

共 9 条

[1]

*APPL SOFTW GROUP, 1992, MINUIT FUNCT MIN ERR

[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J].

CAUGHEY, DM ;

THOMAS, RE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12) :2192-+

[3] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS [J].

GUMMEL, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) :455-&

[4] ELECTRICAL-PROPERTIES AND CHARGE COLLECTION EFFICIENCY FOR NEUTRON-IRRADIATED P-TYPE AND N-TYPE SILICON DETECTORS [J].

LEMEILLEUR, F ;

GLASER, M ;

HEIJNE, EHM ;

JARRON, P ;

OCCELLI, E ;

RIOUX, J .

NUCLEAR PHYSICS B, 1993, :415-424

[5]

LEROY C, 1994, P 4 INT C CAL HIGH E, P627

[6] FAST-NEUTRON RADIATION-DAMAGE EFFECTS ON HIGH-RESISTIVITY SILICON JUNCTION DETECTORS [J].

LI, Z ;

KRANER, HW .

JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (07) :701-705

[7]

Ramo S., 1939, P IRE, V27, P584, DOI [DOI 10.1109/JRPROC.1939.228757, 10.1109/JRPROC.1939.228757]

[8] PLASMA EFFECTS AND CHARGE COLLECTION TIME IN SOLID STATE DETECTORS [J].

TARONI, A ;

ZANARINI, G .

NUCLEAR INSTRUMENTS & METHODS, 1969, 67 (02) :277-+

[9]

WILLIAMSON CF, 1992, TABLES RANGE STOPPIN, P321

← 1 →