Magnetic bipolar transistor

被引：100

作者：

Fabian, J

Zutic, I

Das Sarma, S

机构：

[1] Karl Franzens Univ Graz, Inst Theoret Phys, A-8010 Graz, Austria

[2] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 01期

关键词：

D O I：

10.1063/1.1637954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin. (C) 2004 American Institute of Physics.

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页码：85 / 87

页数：3

相关论文

共 31 条

[1] Spin-torque transistor [J].

Bauer, GEW ;

Brataas, A ;

Tserkovnyak, Y ;

van Wees, BJ .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3928-3930

[2] Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates [J].

Ciuti, C ;

McGuire, JP ;

Sham, LJ .

APPLIED PHYSICS LETTERS, 2002, 81 (25) :4781-4783

[3] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].

DATTA, S ;

DAS, B .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667

[4]

Dietl T., 1994, HDB SEMICONDUCTORS, V3, P1279

[5]

Fabian J, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.165301

[6] Injection and detection of a spin-polarized current in a light-emitting diode [J].

Fiederling, R ;

Keim, M ;

Reuscher, G ;

Ossau, W ;

Schmidt, G ;

Waag, A ;

Molenkamp, LW .

NATURE, 1999, 402 (6763) :787-790

[7]

FIELD M, 2003, COMMUNICATION

[8] Spin-dependent current transmission across a ferromagnet-insulator-two-dimensional electron gas junction [J].

Hammar, PR ;

Johnson, M .

APPLIED PHYSICS LETTERS, 2001, 79 (16) :2591-2593

[9] SPIN-FILTER EFFECT OF FERROMAGNETIC EUROPIUM SULFIDE TUNNEL BARRIERS [J].

HAO, X ;

MOODERA, JS ;

MESERVEY, R .

PHYSICAL REVIEW B, 1990, 42 (13) :8235-8243

[10] Optical detection of hot-electron spin injection into GaAs from a magnetic tunnel transistor source [J].

Jiang, X ;

Wang, R ;

van Dijken, S ;

Shelby, R ;

Macfarlane, R ;

Solomon, GS ;

Harris, J ;

Parkin, SSP .

PHYSICAL REVIEW LETTERS, 2003, 90 (25) :4

← 1 2 3 4 →