Buffer-layer-induced barrier reduction: Role of tunneling in organic light-emitting devices

被引:79
作者
Zhang, ST [1 ]
Ding, XM [1 ]
Zhao, JM [1 ]
Shi, HZ [1 ]
He, J [1 ]
Xiong, ZH [1 ]
Ding, HJ [1 ]
Obbard, EG [1 ]
Zhan, YQ [1 ]
Huang, W [1 ]
Hou, XY [1 ]
机构
[1] Fudan Univ, Inst Adv Mat & Technol, Natl Key Lab, Surface Phys Lab, Shanghai 200433, Peoples R China
关键词
D O I
10.1063/1.1641166
中图分类号
O59 [应用物理学];
学科分类号
摘要
Based on the WKB approximation of the tunneling model, we calculate the J-V characteristics of organic light-emitting devices (OLEDs) having buffer layers of different thickness. The results show how the insertion of a buffer layer with proper thickness lowers the OLED turn-on voltage. Further calculation suggests some parameters, such as the resistivity ratio and the position of the conduction band minimum of the buffer layer relative to the lowest unoccupied molecular orbital of the organic layer, are important in selecting a buffer material. A quantitative estimation of the optimal buffer layer thickness is also presented to serve as a guide to device design. The model is validated by comparison of its predictions to experimental results. (C) 2004 American Institute of Physics.
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收藏
页码:425 / 427
页数:3
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