Lateral current spreading in ridge waveguide laser diodes

被引:27
作者
Achtenhagen, M
Hardy, A
机构
[1] Spectracom, White Bear Lake, MN 55110 USA
[2] Tel Aviv Univ, Dept Elect Engn Phys Electron, IL-69978 Tel Aviv, Israel
关键词
D O I
10.1063/1.123551
中图分类号
O59 [应用物理学];
学科分类号
摘要
Lateral current spreading is experimentally and theoretically investigated in ridge waveguide laser diodes having various residual guide thickness outside the ridge region. It is found that a critical residual thickness exists below which the lasers emit in a single mode with a low threshold current. Above this critical value, the threshold rises rapidly and the lasers oscillate simultaneously in the two lowest order lateral modes. This critical thickness can be used to experimentally determine an average doping level of the upper waveguide layer. This doping level permits the control of the threshold current and series resistance. (C) 1999 American Institute of Physics. [S0003-6951(99)02710-2].
引用
收藏
页码:1364 / 1366
页数:3
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