TEMPERATURE-DEPENDENT THRESHOLD AND MODULATION CHARACTERISTICS IN INGAAS/GAAS QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS

被引：15

作者：

HU, SY

CORZINE, SW

CHUANG, ZM

LAW, KK

YOUNG, DB

GOSSARD, AC

COLDREN, LA

MERZ, JL

机构：

[1] Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara

[2] Department of Electrical Engineering and Computer Sciences, Northwestern University, Technological Institute, Evanston, IL 60208-3118

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 16期

关键词：

D O I：

10.1063/1.113685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The observed temperature dependence of threshold currents in InGaAs/GaAs quantum-well ridge-waveguide lasers is modeled. This method incorporates both experimental data and theoretical gain calculations. The results show that lateral leakage currents must be included in the ridge-waveguide laser models. Based on the same model, the temperature-dependent modulation characteristics for InGaAs/GaAs quantum-well ridge-waveguide lasers are also investigated.© 1995 American Institute of Physics.

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页码：2040 / 2042

页数：3

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