VERY HIGH MODULATION EFFICIENCY OF ULTRALOW THRESHOLD CURRENT SINGLE-QUANTUM-WELL INGAAS LASERS

被引：24

作者：

CHEN, TR

ZHAO, B

ENG, L

ZHUANG, YH

OBRIEN, J

YARIV, A

机构：

[1] T. J. Watson, Sr. Laboratories of Applied Physics, California Institute of Technology, California 91125, 128-95, Pasadena

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 17期

关键词：

SEMICONDUCTOR LASERS; HIGH-SPEED OPTICAL TECHNIQUES;

D O I：

10.1049/el:19931016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A record high current modulation efficiency of 5 GHz/square-root (mA) has been demonstrated in an ultralow threshold strained layer single quantum well InGaAs laser.

引用

页码：1525 / 1526

页数：2

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