HIGH-SPEED OPERATION OF VERY LOW THRESHOLD STRAINED INGAAS/GAAS DOUBLE QUANTUM-WELL LASERS

被引：9

作者：

ZHAO, B ^{[1
]}

CHEN, TR ^{[1
]}

ZHUANG, YH ^{[1
]}

YARIV, A ^{[1
]}

UNGAR, JE ^{[1
]}

OH, S ^{[1
]}

机构：

[1] ORTEL CORP,ALHAMBRA,CA 91803

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期

关键词：

D O I：

10.1063/1.107321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Very low threshold current strained In0.2Ga0.8As/GaAs double quantum well buried-heterostructure lasers have been fabricated by a hybrid metalorganic chemical vapor phase deposition and liquid phase epitaxy regrowth technique. The modulation bandwidths were compared in lasers of different active strip widths, cavity lengths, and facet reflectivities in order to achieve modest high-modulation bandwidth at low operating current. A 5 GHz 3 dB modulation bandwidth is demonstrated at a current of 2.1 mA in a laser with a threshold current of 0.5 mA.

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收藏

页码：1295 / 1297

页数：3

相关论文

共 11 条

[1] THEORY OF GAIN, MODULATION RESPONSE, AND SPECTRAL LINEWIDTH IN ALGAAS QUANTUM WELL LASERS [J].

ARAKAWA, Y ;

YARIV, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (10) :1666-1674

[2] SUBMILLIAMP THRESHOLD INGAAS-GAAS STRAINED LAYER QUANTUM-WELL LASER [J].

CHEN, TR ;

ENG, L ;

ZHAO, B ;

ZHUANG, YH ;

SANDERS, S ;

MORKOC, H ;

YARIV, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (07) :1183-1190

[3]

CHEN TR, IN PRESS APPL PHYS L

[4]

Derry P. L., 1988, Optoelectronics - Devices and Technologies, V3, P117

[5] THRESHOLD CURRENT REDUCTION IN PATTERNED QUANTUM-WELL SEMICONDUCTOR-LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

KAPON, E ;

SIMHONY, S ;

HARBISON, JP ;

FLOREZ, LT ;

WORLAND, P .

APPLIED PHYSICS LETTERS, 1990, 56 (19) :1825-1827

[6] ULTIMATE LIMIT IN LOW THRESHOLD QUANTUM WELL GAALAS SEMICONDUCTOR-LASERS [J].

LAU, KY ;

DERRY, PL ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1988, 52 (02) :88-90

[7]

MCILROY PWA, 1985, IEEE J QUANTUM ELECT, V21, P1958, DOI 10.1109/JQE.1985.1072606

[8] HIGH-SPEED INGAAS/GAAS STRAINED MULTIPLE QUANTUM-WELL LASERS WITH LOW DAMPING [J].

NAGARAJAN, R ;

FUKUSHIMA, T ;

BOWERS, JE ;

GEELS, RS ;

COLDREN, LA .

APPLIED PHYSICS LETTERS, 1991, 58 (21) :2326-2328

[9] HIGH-SPEED MODULATION OF STRAINED-LAYER INGAAS-GAAS-ALGAAS RIDGE WAVE-GUIDE MULTIPLE QUANTUM-WELL LASERS [J].

OFFSEY, SD ;

LESTER, LF ;

SCHAFF, WJ ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1991, 58 (21) :2336-2338

[10] HIGH-SPEED ALGAAS/GAAS MULTIPLE QUANTUM WELL RIDGE WAVE-GUIDE LASERS [J].

WOLF, HD ;

LANG, H ;

KORTE, L .

ELECTRONICS LETTERS, 1989, 25 (18) :1245-1246