HIGH-SPEED MODULATION OF STRAINED-LAYER INGAAS-GAAS-ALGAAS RIDGE WAVE-GUIDE MULTIPLE QUANTUM-WELL LASERS

被引：27

作者：

OFFSEY, SD ^{[1
]}

LESTER, LF ^{[1
]}

SCHAFF, WJ ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 21期

关键词：

D O I：

10.1063/1.104914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strained-layer In0.35Ga0.65As-GaAs-AlGaAs graded index separate confinement heterostructure multiple quantum well lasers were grown by molecular beam epitaxy and processed as ridge waveguide structures. Devices with 3-mu-m X 200-mu-m cavities have threshold currents of 18 mA (3000 A/cm2) and optical waveguide losses of 4.2 cm-1. The microwave modulation bandwidth of a 3-mu-m X 200-mu-m device was determined to be 19.5 GHz, which exceeds the 15.5 GHz reported for multimode index-guided devices, and is the highest direct modulation bandwidth reported for a quantum well laser.

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页码：2336 / 2338

页数：3

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