MEASUREMENT OF THE CARRIER DEPENDENCE OF DIFFERENTIAL GAIN, REFRACTIVE-INDEX, AND LINEWIDTH ENHANCEMENT FACTOR IN STRAINED-LAYER QUANTUM WELL LASERS

被引：58

作者：

RIDEOUT, W ^{[1
]}

YU, B ^{[1
]}

LACOURSE, J ^{[1
]}

YORK, PK ^{[1
]}

BEERNINK, KJ ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 08期

关键词：

D O I：

10.1063/1.102688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurements of the variation of differential gain, refractive index, and linewidth enhancement factor with carrier density in InGaAs-GaAs strained-layer quantum well lasers are presented for the first time. These results verify predictions of improvement over unstrained bulk or quantum well lasers, but only at certain carrier densities. Differential gain (dg/dN) is found to vary from 7.0×10-16 to 2.5×10 -16 cm2 over the range of carrier densities studied, while the carrier dependence of the real part of the refractive index (dn/dN) ranges from a peak of -2.8×10- 20 down to -7.0×10-2 1 cm3. From these measurements the resulting linewidth enhancement factor (α) is found to vary from 5 to a minimum of 1.7. This information is critical to successfully exploiting the potential advantages of strained-layer lasers for such devices as high-frequency or narrow linewidth lasers.

引用

页码：706 / 708

页数：3

共 19 条

[1] THEORY OF GAIN, MODULATION RESPONSE, AND SPECTRAL LINEWIDTH IN ALGAAS QUANTUM WELL LASERS [J].