EFFECT OF STRAIN ON THE BAND-STRUCTURE OF GAAS AND IN0.2GA0.8AS

被引：17

作者：

HWANG, J

SHIH, CK

PIANETTA, P

KUBIAK, GD

STULEN, RH

DAWSON, LR

PAO, YC

HARRIS, JS

机构：

[1] SANDIA NATL LABS,LIVERMORE,CA 94550

[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[3] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 04期

关键词：

D O I：

10.1063/1.99502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：308 / 310

页数：3

共 15 条

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[3] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS
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[4] ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS
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[J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3513 - 3522
[5] EFFECT OF PRESSURE ON SPONTANEOUS AND STIMULATED EMISSION FROM GAAS
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[J]. PHYSICAL REVIEW, 1963, 131 (05): : 2070 - &
[6] NEW TIGHT-BINDING PARAMETERS FOR COVALENT SOLIDS OBTAINED USING LOUIE PERIPHERAL STATES
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[J]. PHYSICAL REVIEW B, 1981, 24 (10) : 5835 - 5843
[7] CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS
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[J]. PHYSICAL REVIEW, 1963, 129 (03): : 1041 - &
[8] PROTECTION OF MOLECULAR-BEAM EPITAXY GROWN ALXGA1-XAS EPILAYERS DURING AMBIENT TRANSFER
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MILLER, DL
WALDROP, JR
NEWMAN, PG
GRANT, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (02): : 255 - 256
[9] LARSEN PK, 1981, SOLID STATE COMMUN, V40, P459, DOI 10.1016/0038-1098(81)90861-9
[10] MILLER DL, 1981, 3RD MBE WORKSH SANT

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