HIGH-SPEED, LOW-THRESHOLD INGAASP SEMIINSULATING BURIED CRESCENT LASERS WITH 22 GHZ BANDWIDTH

被引：9

作者：

HUANG, RT ^{[1
]}

WOLF, D ^{[1
]}

CHENG, WH ^{[1
]}

JIANG, CL ^{[1
]}

AGARWAL, R ^{[1
]}

RENNER, D ^{[1
]}

MAR, A ^{[1
]}

BOWERS, JE ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 04期

关键词：

D O I：

10.1109/68.127191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated high-speed, low-threshold 1.3-mu-m InGaAsP semi-insulating buried crescent lasers with a CW 3-dB modulation bandwidth of 22 GHz and a threshold current as low as 6.5 mA at room temperature. This is the highest 3-dB modulation bandwidth ever reported for the planar-type semi-conductor lasers. These results were achieved by implementing a submicron photolithographic process in the channel etching to reduce the cavity width and a polyimide dielectric layer under the bonding pad area to minimize the electrical parasitics.

引用

页码：293 / 295

页数：3

共 7 条

[1] HIGH-SPEED AND LOW-RELATIVE-INTENSITY NOISE 1.3 MU-M INGAASP SEMIINSULATING BURIED CRESCENT LASERS [J].

CHENG, WH ;

BUEHRING, KD ;

APPELBAUM, A ;

RENNER, D ;

SHIN, S ;

SU, CB ;

MAR, A ;

BOWERS, JE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1642-1647

[2] OPTOELECTRONIC COMPONENTS FOR MULTIGIGABIT SYSTEMS [J].

GOODFELLOW, RC ;

DEBNEY, BT ;

REES, GJ ;

BUUS, J .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (06) :1170-1179

[3]

HESS KL, 1986, J ELECTRON MATER, V16, P127

[4] GROWTH AND CHARACTERIZATION OF FE-DOPED SEMIINSULATING INP PREPARED BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY WITH TERTIARYBUTYLPHOSPHINE [J].

HUANG, RT ;

APPELBAUM, A ;

RENNER, D ;

BURKE, W ;

ZEHR, SW .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (12) :8139-8144

[5]

LAU KY, 1985, IEEE J QUANTUM ELECT, V21, P121

[6] EXTREMELY HIGH-FREQUENCY (24 GHZ) INGAASP DIODE-LASERS WITH EXCELLENT MODULATION EFFICIENCY [J].

MELAND, E ;

HOLMSTROM, R ;

SCHLAFER, J ;

LAUER, RB ;

POWAZINIK, W .

ELECTRONICS LETTERS, 1990, 26 (21) :1827-1829

[7] FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS [J].

OLSHANSKY, R ;

HILL, P ;

LANZISERA, V ;

POWAZINIK, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) :1410-1418

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