Carrier-controlled doping efficiency in La2CuO4+delta

被引：66

作者：

Li, ZG ^{[1
]}

Feng, HH ^{[1
]}

Yang, ZY ^{[1
]}

Hamed, A ^{[1
]}

Ting, ST ^{[1
]}

Hor, PH ^{[1
]}

Bhavaraju, S ^{[1
]}

DiCarlo, JF ^{[1
]}

Jacobson, AJ ^{[1
]}

机构：

[1] UNIV HOUSTON,TEXAS CTR SUPERCONDUCT,HOUSTON,TX 77204

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 27期

关键词：

D O I：

10.1103/PhysRevLett.77.5413

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the excess oxygen content and hole concentration in 110 degrees C annealed La2CuO4+delta prepared by electrochemical oxidation for 0 < delta < 0.12. Two distinct sites were observed with doping efficiency of 2 or 1.3 holes per excess oxygen atom. The occupation of the two different sites is determined by a critical carrier concentration P-c approximate to 0.06. As a consequence, a sudden increase of chemical potential of doped holes at P-c is suggested.

引用

页码：5413 / 5416

页数：4

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