Transition to insulating behavior in the metal-semiconductor digital composite ErAs:InGaAs

被引：10

作者：

Driscoll, DC ^{[1
]}

Hanson, M ^{[1
]}

Kadow, C ^{[1
]}

Gossard, AC ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.1388211

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Superlattice structures of semimetallic ErAs particles embedded in an InGaAs matrix were fabricated on (001) Fe doped InP substrates with varying amounts of ErAs. The samples were characterized by temperature dependent Hall measurements, x-ray diffraction, and transmission electron microscopy. The temperature dependence of the mobility, charge density, and sheet resistance is presented. The apparent offset between the conduction band minimum of the InGaAs matrix and the Fermi energy of the ErAs particles is strongly dependent on the amount of ErAs deposited. The offset is determined from the measured charge density and the InGaAs density of states. As the size of the ErAs particles increases, the Fermi level decreases from similar to0.01 eV above the InGaAs conduction band edge to similar to0.15 eV below the InGaAs conduction band edge and the electrical conduction properties change from metallic to semiconducting. (C) 2001 American Vacuum Society.

引用

页码：1631 / 1634

页数：4

共 13 条

[11] ULTRAFAST 1.55-MU-M PHOTORESPONSES IN LOW-TEMPERATURE-GROWN INGAAS/INALAS QUANTUM-WELLS [J].

TAKAHASHI, R ;

KAWAMURA, Y ;

KAGAWA, T ;

IWAMURA, H .

APPLIED PHYSICS LETTERS, 1994, 65 (14) :1790-1792

[12] Ultrafast 1.55 mu m all-optical switching using low-temperature-grown multiple quantum wells [J].

Takahashi, R ;

Kawamura, Y ;

Iwamura, H .

APPLIED PHYSICS LETTERS, 1996, 68 (02) :153-155

[13] Optical and terahertz power limits in the low-temperature-grown GaAs photomixers [J].

Verghese, S ;

McIntosh, KA ;

Brown, ER .

APPLIED PHYSICS LETTERS, 1997, 71 (19) :2743-2745

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