Bound states at impurities in a two-dimensional metal

被引：6

作者：

Dupont-Ferrier, E ^{[1
]}

Mallet, P ^{[1
]}

Magaud, L ^{[1
]}

Veuillen, JY ^{[1
]}

机构：

[1] CNRS, LEPES, F-38042 Grenoble, France

来源：

EUROPHYSICS LETTERS | 2005年 / 72卷 / 03期

关键词：

D O I：

10.1209/epl/i2005-10263-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present an experimental study of the local electronic properties of atomic-size impurities in an ErSi(2) layer grown on the Si(111) surface, which behaves as a quasi-two-dimensional (2D) metal. From scanning tunneling spectroscopy measurements at T = 45 K, we show that the silicide 2D state probed on defect-free areas becomes localized at impurities. For two different silicide point-defects, a resonance is found in the conductance spectra, at voltages above the 2D state band edge. This resonance is interpreted as a bound state within a repulsive impurity potential model. Spectroscopy on additional extra-impurities obtained after Co deposition is also reported.

引用

收藏

页码：430 / 436

页数：7

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