Metal-insulator transition of disordered interacting electrons

被引：76

作者：

Si, QM ^{[1
]}

Varma, CM

机构：

[1] Rice Univ, Dept Phys, Houston, TX 77251 USA

[2] AT&T Bell Labs, Bell Labs, Murray Hill, NJ 07974 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.81.4951

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We calculate the corrections to the conductivity and compressibility of a disordered metal when the mean free path is smaller than the screening length. Such a condition is shown to be realized for low densities and large disorder. Analysis of the stability of the metallic state reveals a transition to the insulating state in two dimensions. [S0031-9007(48)07734-5].

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页码：4951 / 4954

页数：4

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