Characteristics of boron δ-doped diamond for electronic applications

被引：37

作者：

El-Hajj, H. ^{[1
]}

Denisenko, A. ^{[1
]}

Bergmaier, A. ^{[2
]}

Dollinger, G. ^{[2
]}

Kubovic, M. ^{[1
]}

Kohn, E. ^{[1
]}

机构：

[1] Univ Ulm, Dept Electron Devices & Circuits, D-89069 Ulm, Germany

[2] Univ Bundeswehr Munchen, Inst Angew Phys & Messtech LRT2, Munich, Germany

来源：

关键词：

delta-doping; CVD growth; elastic recoil detection; electrochemical impedance;

D O I：

10.1016/j.diamond.2007.12.030

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Boron delta-doped profiles with peak concentrations above the full activation limit have been grown on (100)-oriented single crystal diamond substrates by microwave assisted CVD using a solid doping source technique. The growth process was optimized targeting electronic device applications. Up to now these profiles could only be analyzed by chemical/physical profiling and it had been difficult to relate these profiles to the electrical characteristics. For the first time, ERD (Electron Recoil Detection) profiles could be correlated with free carrier profiles extracted by electrochemical profiling based on electrochemical impedance analysis. The comparison shows, that it is possible to incorporate boron on acceptor site with high efficiency even for concentrations in the order of 10(21) cm(-3) by the doping technique developed. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：409 / 414

页数：6

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