Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency

被引：131

作者：

Bai, Y. ^{[1
]}

Slivken, S. ^{[1
]}

Darvish, S. R. ^{[1
]}

Razeghi, M. ^{[1
]}

机构：

[1] NW Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 02期

关键词：

D O I：

10.1063/1.2957673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InP based quantum cascade laser heterostructure emitting at 4.6 mu m was grown with gas-source molecular beam epitaxy. The wafer was processed into a conventional double-channel ridge waveguide geometry with ridge widths of 19.7 and 10.6 mu m without semi-insulating InP regrowth. An uncoated, narrow ridge device with a 4.8 mm cavity length was epilayer down bonded to a diamond submount and exhibits 2.5 W maximum output power with a wall plug efficiency of 12.5% at room temperature in continuous wave operation. (C) 2008 American Institute of Physics.

引用

页数：3

共 7 条

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