High-power, continuous-operation intersubband laser for wavelengths greater than 10 μm

被引：66

作者：

Slivken, S. ^{[1
]}

Evans, A. ^{[1
]}

Zhang, W. ^{[1
]}

Razeghi, M. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 15期

关键词：

D O I：

10.1063/1.2722190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, high-power continuous-wave emission (> 100 mW) and high temperature operation (358 K) at a wavelength of 10.6 mu m is demonstrated using an individual diode laser. This wavelength is advantageous for many medium-power applications previously reserved for the carbon dioxide laser. Improved performance was accomplished using industry-standard InP-based materials and by careful attention to design, growth, and fabrication limitations specific to long-wave infrared semiconductor lasers. The main problem areas are explored with regard to laser performance, and general steps are outlined to minimize their impact. (c) 2007 American Institute of Physics.

引用

页数：3

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